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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2065 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB1372 APPLICATIONS *Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i 140 V 140 V 5 V 7 A 12 A 80 W UNIT .cn mi e IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2065 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V VBE(on) ICBO Base -Emitter On Voltage IC= 5A; VCE= 5V 1.8 V A A Collector Cutoff Current VCB= 140V; IE= 0 50 IEBO hFE-1 Emitter Cutoff Current VEB= 3V; IC= 0 IC= 20mA; VCE= 5V 20 50 DC Current Gain hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance hFE-2Classifications Q 60-120 S 80-160 w P ww scs .i IC= 5A; VCE= 5V IC= 0.5A; VCE= 5 V; f= 1MHz IE= 0; VCB= 10V; f= 1MHz .cn mi e 60 20 200 20 MHz 110 pF 100-200 isc Websitewww.iscsemi.cn 2 |
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